Sputtering target

Details Sputtering target Sputtering target

1992-07-17

1994-06-14

McFarlane, Anthony

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20429812, 501 53, 423326, C23C 1434

Patent

active

053207297

ABSTRACT:
Disclosed herein is a sputtering target with which a high resistivity thin film consisting of chromium, silicon and oxygen can be produced economically and stably for a long time. Also disclosed is a process for producing the sputtering target by selecting the grain size of a chromium (Cr) powder and a silicon dioxide (SiO.sub.2) powder, drying the powders sufficiently by heating, then mixing the dried powders to obtain a mixed powder containing generally from 20 to 80% by weight of chromium, most preferably from 50 to 80% by weight of chromium, the remainder being silicon dioxide, packing the mixed powder in a die, and sintering the packed powder by hot pressing or the like, to produce a desired sputtering target which has a two phase mixed structure. The sputtering target can be used for manufacture of thin film resistors and electric circuits.

REFERENCES:
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patent: 4466940 (1984-08-01), Siewert et al.
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patent: 4832771 (1989-05-01), Hamamatu et al.
patent: 4917722 (1990-04-01), Kuniya et al.
patent: 4963240 (1990-10-01), Fukasawa et al.
patent: 4966676 (1990-10-01), Fukasawa et al.
patent: 5118661 (1992-06-01), Maeda

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