Sputtering target

Details Sputtering target Sputtering target

1988-03-02

1989-06-27

Weisstuch, Aaron

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20419215, 20419217, C23C 1434

Patent

active

048427063

ABSTRACT:
Disclosed is a sputtering target which comprises a single block composed of one or more of metals prepared by a melting process or an alloy thereof; a combined block of the plural single blocks; or a combined block of the single blocks and silicon blocks; an average size of the crystal grains of the metal or the alloy being between 1 .mu.m and 1 mm.

REFERENCES:
patent: 4468313 (1984-08-01), Okumura et al.
N. Q. Lam, Journal of Vacuum Science & Technology A, "Elevated-Temperature Sputtering . . . ," vol. 3, No. 6, Second Series, Nov.-Dec. 1985, pp. 2152-2160.
Y. Nozawa, Patent Abstracts of Japan, vol. 10, No. 302 (E-445) [2358], Oct. 15, 1986.
R. Shibata, Patent Abstracts of Japan, vol. 10, No. 335 (C-384) [2391], Nov. 13, 1986.
N. Kuramoto, Patent Abstracts of Japan, vol. 10, No. 49 (C-330) [2106], Feb. 26, 1986.
M. Inoue, Patent Abstracts of Japan, vol. 10, No. 275 (E-438) [2331], Sep. 18, 1986.

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