Sputtering system for optimizing quartz deposition uniformity

Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering

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204192D, C23C 1500

Patent

active

042383129

ABSTRACT:
A sputtering system adapted for depositing quartz in uniform thicknesses upon multiple wafers processed in batches including an anode plate having a plurality of wafer locations spaced from the center of the anode, with each wafer location comprising a wafer receiving recess in the anode plate having an angular bottom slope which, in effect, tilts the wafer to an optimum deposition angle with respect to the cathode, depending upon wafer spacing from the center of the anode, to insure uniform deposition across the wafer.

REFERENCES:
patent: 4153528 (1979-05-01), Galicki et al.
S. S. Scianna, "Improving Uniformity of Sputtered Quartz," IBM Technical Disclosure Bulletin, vol. 13, No. 6, Nov. 1970, p. 1448.
M. M. Gartner et al., "Compensation Mechanism For Uniform Sputtering," IBM Technical Disclosure Bulletin, vol. 19, No. 2, Jul. 1976, pp. 516-517.

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