Sputtering-system baffle

Details Sputtering-system baffle Sputtering-system baffle

1985-02-28

1986-08-05

O'Keefe, Veronica

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

204192C, 428621, 428667, C23C 1500, H01J 3708

Patent

active

046041796

ABSTRACT:
A baffle for use in achieving a substantially isotropic grain structure in a crystalline layer which is sputtered onto a substrate by moving the substrate linearly, and without rotation, in a front-to-back direction below a sputtering target. The baffle has front and back shields which are adapted to limit deposition of sputtered material onto the moving substrate substantially to substrate regions which directly underlie the target. A pair of strips in the baffle are constructed to effect substantially symmetrical sputtering of material onto the substrate surface from opposite target side directions, to produce an isotropic crystal structure during early phases of film deposition.

REFERENCES:
patent: 4381453 (1983-04-01), Cuomo et al.
patent: 4392931 (1983-07-01), Maniv et al.

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