Sputtering method of manufacturing film type light receiving ele

Details Sputtering method of manufacturing film type light receiving ele Sputtering method of manufacturing film type light receiving ele

1981-03-11

1982-11-09

Welsh, John D.

Coating processes

Electrical product produced

Photoelectric

4271262, 427 87, 427 89, 428623, 428635, 428636, 428642, 357 30, 430128, 4272553, H01L 2714

Patent

active

043584780

ABSTRACT:
A method of manufacturing a film type light receiving element in which the electric current ratio for light and dark input intensities is maximized. Metal electrodes and a photoconductive film are provided in the form of belt-shaped layers on a flat smooth substrate such as a quartz layer. An optically transmissive electrode film of a tin oxide compound is formed thereon in a magnetron type sputtering device. Utilizing the fact that the electric current ratio for light and dark input intensities of the light receiving element varies according to the oxygen partial pressure of the sputtering atmosphere in the sputtering device, the oxygen partial pressure is set close to a value at which the electric current ratio for light and dark input intensities is at a peak value.

REFERENCES:
patent: 4214253 (1980-07-01), Hall
patent: 4234625 (1980-11-01), Petrov et al.
patent: 4255686 (1981-03-01), Marugama

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