Sputtering method for producing solder-fast copper layers

Details Sputtering method for producing solder-fast copper layers Sputtering method for producing solder-fast copper layers

1974-10-10

1976-01-06

Tung, T.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

29590, C23C 1500, H01L 21283

Patent

active

039309754

ABSTRACT:
Copper is sputtered onto a substrate to make a solder-fast contact layer by carrying out the sputtering in a discharge of a monatomic gas containing 0.5 to 16% of air, nitrogen or oxygen which reduces the conductivity of the copper layer, but makes it resistant to alloying with a solution in solder, to an extent comparable with the results obtained by the provision of intermediate diffusion barrier layers. Best results are obtained in an argon discharge in the presence of an admixture of nitrogen or air between 2 and 4% by volume. The solder-wetting properties are not impaired.

REFERENCES:
patent: 3720541 (1973-03-01), King
patent: 3766041 (1973-10-01), Wasa et al.
patent: 3798146 (1974-03-01), Wan et al.
patent: 3835007 (1974-09-01), Ferat et al.
Berry et al. "Thin Film Technology," Van, Nostrand Reinhold, N.Y. (1968), pp. 210-211.

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