Sputtering method for forming superconductive films using water

Details Sputtering method for forming superconductive films using water Sputtering method for forming superconductive films using water

1991-03-13

1992-06-30

Weisstuch, Aaron

Superconductor technology: apparatus, material, process

High temperature , per se

Having tc greater than or equal to 150 k

20419224, 505731, H01L 3924, C23C 1434

Patent

active

051263181

ABSTRACT:
A superconducting film is deposited in a closed, non-baked reactor (10) containing a sputtering gas comprising O.sub.2 with H.sub.2 O vapor addition to preferably provide a total H.sub.2 O vapor pressure of between 3.times.10.sup.-3 mbar to 266.times.10.sup.-3 mbar, where a copper oxide-based target material (15) is used and the deposition substrates (16) are maintained between 550.degree. C. and 800.degree. C.

REFERENCES:
patent: 3912612 (1975-10-01), Gavaler et al.
patent: 4043888 (1975-08-01), Gavaler
patent: 4361472 (1982-11-01), Morrison, Jr.
patent: 4400254 (1982-01-01), Freller et al.
patent: 4929595 (1988-02-01), Wu
patent: 4963524 (1990-10-01), Yamazaki
Gavaler et al., Physica B, vols. 165 and 166, pp. 1513-1514, Aug. 16-22, 1990, "Optimization of T.sub.c and J.sub.c in Sputtered YBCO Films".

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