Sputtering method

Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k

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Details

20419224, 20429821, 505816, 505731, H01L 3924

Patent

active

050473948

ABSTRACT:
Combination of a flattened cathode in a cylindrical magnetron sputtering system and positioning of a substrate relatively close to the flattened cathode allows deposition of a uniform film having good composition. The system and method of the present invention is especially suitable for depositing films using YBCO and BCSCO targets.

REFERENCES:
patent: 2146025 (1939-02-01), Penning
patent: 3945911 (1976-03-01), McKelvey
patent: 4126530 (1978-11-01), Thornton
patent: 4828664 (1989-05-01), Dietrich et al.
patent: 4842704 (1989-06-01), Collins et al.

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