Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1988-09-30
1990-10-16
Weisstuch, Aaron
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
20419224, 20429817, 505727, 505731, H01L 3900, C23C 1435
Patent
active
049635247
ABSTRACT:
A sputtering device to produce a thin film of a superconducting oxide material, in which a pair of targets with a film-forming surface portion thereon are mutually separated and facing each facing each other, so that a magnetic field is applied between the targets which are placed parallel or perpendicular to this magnetic field, whereby crystal orientation is caused to occur during the growth of the film by obtaining direct contact between this magnetic field and the film-forming surface portion.
REFERENCES:
patent: 4183797 (1980-01-01), Kennedy et al.
patent: 4407894 (1983-10-01), Kadokura et al.
patent: 4544468 (1985-10-01), Munz
Wall Street Journal, Jul. 9, 1987, article by David Stipp, p. 23, Cols. 1-3.
Semiconductor Energy Laboratory Co,. Ltd.
Weisstuch Aaron
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