Sputtering device

Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering

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Details

20429811, 20429815, 20429823, 20429825, C23C 1434, C23C 1456

Patent

active

056722559

ABSTRACT:
A sputtering device for coating a substrate which enters the device downstream and exits the device upstream. The device includes a vacuum container having a gas exhausting portion; a gas providing portion for providing inactive gas and reactive gas into the vacuum container upstream of the gas exhausting portion; a target provided in the vacuum container between a gas inlet and the gas exhausting portion; a diffusion interval from the target to the gas inlet, the diffusion interval having a length at least as great as the shortest distance between the target and the substrate to be coated; substrate supporting structure for supporting the substrate so that the substrate faces the target; and a plasma producing portion to produce gas plasma near the substrate. The reactive gas uniformly diffuses with the inactive gas within the diffusion interval, is made to be a plasma state, and reacts with sputtering particles scattered from the target to form a uniform film on a surface of the substrate.

REFERENCES:
patent: 4128466 (1978-12-01), Harding et al.
patent: 4194962 (1980-03-01), Chambers et al.
patent: 4421622 (1983-12-01), Hollars
patent: 4975168 (1990-12-01), Ohno et al.
patent: 4988422 (1991-01-01), Wirz
patent: 5180476 (1993-01-01), Ishibashi et al.
patent: 5228968 (1993-07-01), Zejda
ULVAC Technical Journal, Mar./1989, No. 31, pp. 9-13.

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