Sputtering device

Details Sputtering device Sputtering device

1988-12-08

1990-06-12

Weisstuch, Aaron

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20429809, 20429812, C23C 1434, C23C 1450

Patent

active

049330632

ABSTRACT:
A sputtering device includes a vacuum chamber, a target disposed in the vacuum chamber, a protection plate formed to surround the target with a space therebetween, and having an opening formed in front of the target, a substrate holder for holding a semiconductor wafer substrate and substantially closing the opening in front of the target in cooperation with the semiconductor wafer substrate, and an A.C. power source for striking the target with charged particles to emit target material when the semiconductor wafer substrate is set in front of the target, whereby depositing target material thereon as a sputtered film. The sputtering device further includes a temperature sensor, a heater unit and heater controller to heat at least the protection plate to a specified temperature and to maintain the specified temperature after sputtering is complete.

REFERENCES:
patent: 4610775 (1986-09-01), Phifer
Patent Abstracts of Japan, vol. 10, No. 168 (E-411) {2224}, 14th Jun. 1986 and JP-A-61 20 317 (Nippon Denki K. K.), Jan. 29, 1986.

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