Sputtering chamber structure for high-frequency bias sputtering

Details Sputtering chamber structure for high-frequency bias sputtering Sputtering chamber structure for high-frequency bias sputtering

1988-08-24

1990-01-30

Weisstuch, Aaron

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20419222, C23C 1444

Patent

active

048971723

ABSTRACT:
A sputtering chamber structure is used to effect a high-frequency bias sputtering process and includes target and semiconductor electrodes, a metal protection plate formed to surround said target and having a first opening facing the front surface of the target, and a vacuum chamber for receiving the electrodes and the protection plate in a reduced-pressure condition during the high-frequency bias sputtering process. In the sputtering chamber structure, the protection plate further has a second opening which is formed separately from the first opening to decentralize target power in the inner space defined by the protection plate when the high-frequency bias sputtering process is effected such that the first opening is closed by the substrate electrode.

REFERENCES:
patent: 3558467 (1971-01-01), Jackson
patent: 4094764 (1978-06-01), Boucher et al
patent: 4525262 (1985-06-01), Class et al.

Affiliated with

Also associated with

Rating

Sputtering chamber structure for high-frequency bias sputtering does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Sputtering chamber structure for high-frequency bias sputtering , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sputtering chamber structure for high-frequency bias sputtering will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1922232