Sputtering cathode arrangement according to the magnetron princi

Details Sputtering cathode arrangement according to the magnetron princi Sputtering cathode arrangement according to the magnetron princi

1991-10-23

1992-11-17

Nguyen, Nam X.

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20419212, 20429819, 20429811, C23C 1434

Patent

active

051640635

ABSTRACT:
In a sputtering cathode arrangement according to the magnetron principle for the coating of a flat circular substrate, with a circular ring-shaped target and an outer mask and inner mask disposed between the target and the substrate, a magnet system with a yoke plate being disposed in back of the target for the production of the magnetron effect, the inner mask is fastened to a mask holder which is brought through the center of the target, the magnet system with the yoke plate (8) being disposed for rotation about an axis of rotation (M) going through the center of the target, and consisting of at least two magnet arrangements (9,9', . . . ; 10,10', . . . ) off-center from the axis of rotation, each of which produces a self-contained tunnel of magnetic lines of force, each tunnel lying outside of the axis of rotation (M), and the eccentric dispositions of the two magnet arrangements with respect to the axis of rotation (M) being so chosen that the sum of the rate contributions of all target portions within magnetic lines of force from magnetrons and deposited on the substrate is very uniform across the radius within the circular coating surface.

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