Sputtering cathode apparatus

Details Sputtering cathode apparatus Sputtering cathode apparatus

1982-09-30

1984-03-20

Demers, Arthur P.

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

204192R, C23C 1500

Patent

active

044379668

ABSTRACT:
A sputtering cathode apparatus for the deposition of thin films which are produced at a relatively high deposition rate. A relatively large planar magnetron sputtering system or apparatus is provided with a preferred single convoluted electron path so as to obtain high geometric efficiency. The target is larger than the substrate and the substrate motion is confined to an area within the defined target area. The cathode system requires a vacuum system of relatively small dimension due to the increase in target size in comparison with substrate size along with the provision for multiple plasma legs separated by non-emissive regions therebetween. This construction enables minimized substrate motion relative to the target.

REFERENCES:
patent: 3779891 (1973-12-01), Vegh et al.
patent: 4170541 (1979-10-01), Lamont
patent: 4308126 (1981-12-01), Wright
patent: 4322276 (1982-03-01), Meckel et al.
Bertelsen, IBM Technical Disclosure Bulletin, vol. 6, Jul. 1963, pp. 69-70.

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