Sputtering apparatus simulation method

Details Sputtering apparatus simulation method Sputtering apparatus simulation method

1998-11-30

2000-06-06

Nguyen, Nam

Classifying, separating, and assorting solids

Fluid suspension

Liquid

36946902, 369578, C23C 1434

Patent

active

060707356

ABSTRACT:
Calculation is made of a collision point and a collision time of collision between a sputter particle and a surrounding gas particle (step 102). The collision time is compared with a unit time having a predetermined length (step 104). When the collision time is smaller than the unit time, calculation is made of the temperature distribution of a surrounding gas at the collision point with reference to a result of thermal analysis performed in a preceding unit time (step 105). Then, the energy variation of the surrounding gas particle is calculated by the use of the temperature distribution (steps 106-109). After the calculation is performed for all collision coordinates within the unit time, the temperature distribution of the surrounding gas at the collision point. is obtained by thermal analysis with reference to the result of calculation of the energy variation and the unit time is renewed (steps 111-113).

REFERENCES:
patent: 5751607 (1998-05-01), Ohta
patent: 5815684 (1998-09-01), Ohta et al.
patent: 5850356 (1998-12-01), Yamada et al.
H. Yamada et al., "Practical Monte Carlo Sputter Desposi tion Simulation with Quasi-Axis-Symmetrical (QAS) Approxi-mation," pp. 21.4.1-21.4.4, IEEE, 1994.

Affiliated with

Also associated with

Rating

Sputtering apparatus simulation method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Sputtering apparatus simulation method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sputtering apparatus simulation method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2207052