Sputtering apparatus for forming a conductive film in a contact

Details Sputtering apparatus for forming a conductive film in a contact Sputtering apparatus for forming a conductive film in a contact

1996-12-03

1999-07-13

Nguyen, Nam

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20429811, 20429808, 20429814, 20429815, 20419212, C23C 1434, C23C 1442, C23C 1444

Patent

active

059221801

ABSTRACT:
A sputtering apparatus contains a sputtering reaction chamber. A target is provided in the sputtering reaction chamber. A shielding plate is provided in the vicinity of the target. An emitter is electrically connected to the shielding plate for causing ionized sputter-particles and neutral sputter-particles to be emitted from the target and dropped at various angles into an under-space positioned under the target and in the sputtering reaction chamber. A substrate holder is provided in the sputtering reaction chamber. The substrate holder is laterally distanced from the under-space for holding a substrate so that a surface of the substrate is vertical. A generator is provided for generating a static field in a lateral direction to be applied across a laterally extending space which includes the substrate holder and the under-space so that the static field does laterally accelerate only the ionized sputter-particles toward the substrate held by the substrate holder for a lateral deposition of the ionized sputter-particles onto the surface of the substrate.

REFERENCES:
patent: 4997539 (1991-03-01), Komizo et al.
patent: 5110435 (1992-05-01), Haberland
patent: 5480527 (1996-01-01), Welty
patent: 5492606 (1996-02-01), Stauder et al.
patent: 5584974 (1996-12-01), Sellers

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