Sputtering apparatus and an ion source

Details Sputtering apparatus and an ion source Sputtering apparatus and an ion source

1992-07-17

1994-02-22

Weisstuch, Aaron

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20429806, 20429812, 20429818, 20429819, 20429826, C23C 1435

Patent

active

052883868

ABSTRACT:
A sputtering apparatus including two electrodes, a sputtering target disposed on one of the electrodes, and a gas supply for supplying a discharge gas in a vacuum to produce an electric discharge between the two electrodes and whereby particles sputtered from the target due to impact thereon of ions produced by the discharge, are deposited on a substrate. The target disposed on one electrode is formed into an elongated band and the other electrode is disposed so as to enclose the target. The other electrode is also provided with a magnet for producing a magnetic field thereon, and further includes a narrow elongated slot which defines a narrow sputter particle outlet. The narrow sputter particle outlet permits a pressure to exist near the electrical discharge which is higher than the pressure near the substrate. According to a preferred embodiment, the sputtering apparatus has an ion source combined integrally therewith.

REFERENCES:
patent: 4841197 (1989-06-01), Takayama et al.
patent: 4946576 (1990-08-01), Dietrich et al.
patent: 5122252 (1992-06-01), Latz et al.
patent: 5154810 (1992-10-01), Kamerling et al.

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