Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1997-05-20
2000-04-04
McDonald, Rodney
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
20429819, 20429803, C23C 1435
Patent
active
060456728
ABSTRACT:
A sputtering apparatus with improved bottom coverage ratio, is used in a film depositing step for manufacturing a semiconductor integrated circuit or the like. In the apparatus, arcuate leakage lines of magnetic force emerge from a magnet mechanism which is part of a cathode, and the lines of magnetic force are ranged into a circumferential shape so as to set a plurality of circumferential magnetic fields on the surface of a target. The plurality of circumferential magnetic fields form a plurality of erosion regions having a circumferential shape, without the regions crossing each other. When the diameter of the deepest erosion portion is small, the incident angle of sputter particles can be made small without increasing the target-to-substrate distance. Specifically, in a portion of the substrate on which sputter particles impinge at the largest incident angle from the deepest erosion portion of the erosion regions, the incident angle is smaller than that in the case of a single erosion region, thereby allowing an improved bottom coverage ratio of the fine holes in the substrate, while maintaining a required film deposition rate.
REFERENCES:
patent: 4401539 (1983-08-01), Abe et al.
patent: 4746417 (1988-05-01), Ferenbach et al.
patent: 4747926 (1988-05-01), Shimizu et al.
patent: 4891560 (1990-01-01), Okumura et al.
Kobayashi Masahiko
Takahashi Nobuyuki
Anelva Corporation
McDonald Rodney
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