Sputtering apparatus

Details Sputtering apparatus Sputtering apparatus

2004-07-14

2008-03-04

Neckel, Alexa D. (Department: 1795)

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

C204S192100, C204S192120, C204S192170, C204S192300, C204S298110, C204S298070, C204S192130, C204S192150, C428S432000, C156S345240, C315S111210, C356S630000, C118S7230HC

Reexamination Certificate

active

07338581

ABSTRACT:
A sputtering apparatus includes paired targets31disposed in a vacuum chamber30, substrate holder33disposed at a position nearly perpendicular to the paired target31and apart from a space formed by the paired targets31, a plasma source37for generating reaction plasma by after-glow plasma in the vicinity of the substrate holder33, and a lead-in pipe38which connects the plasma source37to the vacuum chamber30. Since reaction plasma of after-glow plasma can be produced in the vicinity of the substrate holder33, it is possible to form a thin film of compound close to bulk characteristics at a low substrate temperature without the film being damaged by plasma.

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Noguchi, Masahiro. May 21, 2003. Japanese Patent Office Abstract. JP2003147529.

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