Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1997-05-21
2000-06-06
McDonald, Rodney G.
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
20419212, 20419217, 20429812, C23C 1434
Patent
active
060713909
ABSTRACT:
A sputtering apparatus which is used in a film depositing step in manufacturing a semiconductor integrated circuit or the like. In a vacuum vessel, a target and a substrate are disposed so as to be coaxial and parallel with and oppose each other, and a thin film is deposited on the inner face of a fine hole which is formed in the surface of the substrate. The target has a size Dt at which relationships that Q.sub.1 =N.multidot.Q.sub.2 and that N is not smaller than 0.7, and more preferably not smaller than 0.7 and not larger than 1.2 are established between an angle Q.sub.1 satisfying tan Q.sub.1 =(Dt-Ds)/2L, and an angle Q.sub.2 satisfying tan Q.sub.2 =A/B where A indicates a diameter of the opening of the fine hole, B indicates a depth of the hole, Ds indicates a size of the substrate, and L indicates a distance between the target and the substrate.
REFERENCES:
patent: 4169031 (1979-09-01), Brors
patent: 4816126 (1989-03-01), Kamoshida et al.
patent: 5232569 (1993-08-01), Nelson et al.
patent: 5330628 (1994-07-01), Demaray et al.
Applicant's specification p. 3 lines 24-26; p. 4 lines 1-13, May 1997.
Anelva Corporation
McDonald Rodney G.
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