Sputtering apparatus

Details Sputtering apparatus Sputtering apparatus

1996-10-23

2000-02-08

Nguyen, Nam

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20429811, 20429819, C23C 1434

Patent

active

060224614

ABSTRACT:
A long distance sputtering apparatus is provided in which a target and a substrate are disposed so as to oppose each other in a vacuum vessel provided with an exhaust system, wherein the target and substrate are separated by a distance of 150 mm or more. The long distance sputtering apparatus includes a gas-introducing tube, a cylindrical shield, and an exhaust hole. The gas-introducing tube introduces gas from a location closer to the target than halfway between the target and the substrate. The shield is disposed so as to surround the space between the target and the substrate. The exhaust hole is formed closer to the substrate than the gas-introducing tube. The pressure distribution of the sputtering gas between the target and the substrate is characterized by a higher pressure toward the target and a lower pressure toward the substrate.

REFERENCES:
patent: 4094764 (1978-06-01), Boucher et al.
patent: 4988422 (1991-01-01), Wirz
patent: 5334302 (1994-08-01), Kubo et al.
patent: 5470451 (1995-11-01), Kobayashi et al.
patent: 5476838 (1995-12-01), Wordenweber et al.
patent: 5651867 (1997-07-01), Kokaku et al.
patent: 5770025 (1998-06-01), Kiyota
A300 Brochure; May, 1994.

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