Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1997-01-16
1998-04-28
Breneman, R. Bruce
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
20429807, 20429809, 20429813, 20429815, 20419212, 20429819, C23C 1434
Patent
active
057440166
ABSTRACT:
A magnetron sputtering electrode 2 is attached to a vacuum chamber 1 to make it retain a Ti target 4 via a back plate 3. A substrate 9 is loaded on a substrate holder 8 provided at a lower portion of the vacuum chamber 1. A collimation plate 6 is provided between the substrate 9 and the Ti target 4 to pass through only the sputtered particles advancing in the vertical direction, and, at its outside, shield plates 5, 7 are provided. The shield plate 5 at the target side is shaped in a wave form and thus its surface area is increased so that nitrogen can be adsorbed as much as possible.
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G.A. Dixit et al.; "A Reactively Sputtered Coherent TiN Process"; Proceedings of 1993 VLSI Multilevel Interconnection Conference, pp. 433-435. Jun. 1993.
S. Ramaswami et al.; "Single Chamber Implementation of a Coherent Ti/Tin Process for Sub-Half Micron Technologies"; Proceedings of 1993 VLSI Multilevel Interconnection Conference, pp. Jun. 1993.
Shinmura Toshiki
Yamada Yoshiaki
Breneman R. Bruce
McDonald Rodney G.
NEC Corporation
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