Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1991-09-30
1993-10-19
Nguyen, Nam
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
20429807, 2042982, 20429825, 20429828, 20419212, C23C 1434
Patent
active
052542360
ABSTRACT:
In a sputtering apparatus comprising a film-deposition chamber having a gas-supplying pipe connected thereto, for depositing a film on the surface of a substrate to be processed, a target provided in the film-deposition chamber, a mask having an opening portion and a masking portion, the mask being provided opposing to the target in the film-deposition chamber, and holding means for holding the substrate against the mask in such a manner that the film-depositing surface of the substrate is in close contact with the mask, the improvement according to the present invention comprises a mask having exhaust passages formed in the masking portion thereof, each of exhaust passages having one end exposed to the inside of the film-deposition chamber and the other end exposed to the outside of the film-deposition chamber, the one end of each of the exhaust passages and the other end thereof being communicated with each other, but not seen through each other.
REFERENCES:
patent: 4444643 (1984-04-01), Garrett
patent: 4820371 (1989-04-01), Rose
patent: 4849087 (1989-07-01), Meyer
patent: 4886592 (1989-12-01), Anderle et al.
patent: 4938858 (1990-07-01), Zejda
Singulus Catalog (not clearly dated) "A Family of Single Disc Metallizing Systems".
Ikeda Jiro
Kinokiri Kyoji
Nguyen Nam
Shibaura Engineering Works Co. Ltd.
LandOfFree
Sputtering apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Sputtering apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sputtering apparatus will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1349366