Sputtering apparatus

Details Sputtering apparatus Sputtering apparatus

1993-11-26

1996-05-07

Nguyen, Nam

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20419212, 20429807, 20429809, 20429811, 20429814, 20429825, 20429815, C23C 1434

Patent

active

055142591

ABSTRACT:
A sputtering apparatus has a pressure resistant vessel, from which gas in discharged and into which gas for sputtering is supplied, a substrate disposed in the vessel to be formed with a film at one surface thereof, a target disposed oppositely to one surface of the substrate to be formed of a substance to become a material of the film, a magnet provided on the surface of the target oppositely to the substrate to generate a magnetic field for confining a plasma in the vicinity of the surface of the target opposed to the substrate, a plate-shaped anode disposed between the substrate and the target to be formed with an opening of the shape in which at least one side is larger than the profile of the substrate at a position opposed to the substrate, and a sputtering current supplier between the anode and the target. The anode is made of a conductor. An opening larger than the profile of the substrate is formed at a position of the anode opposed to the substrate.

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Review of Scientific Instruments, vol. 54, No. 5, May 1983, pp. 633-635 "Substrate Heater and Biasing Electrode Assembly for RF Sputtering Unit".

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