Sputtering apparatus

Details Sputtering apparatus Sputtering apparatus

1994-07-13

1995-01-17

Weisstuch, Aaron

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20429819, 20429823, C23C 1435

Patent

active

053823443

ABSTRACT:
At least one magnetron cathode provided in a sputtering apparatus comprises a magnet assembly in which first and second types of magnet units whose N and S poles are oppositely disposed are alternately disposed adjacent to each other. Two types of loop loci in which drift electron motions are directed in the opposite directions are alternately formed adjacent to each other by said first and second magnet units on a surface of the target. Consequently, a hybrid orbit is formed, and an ion current generation region is enlarged. Furthermore, a moving mechanism for reciprocating the magnet assembly is provided in the magnetron cathode. The above configuration solves the problem involving generation of non-uniform ion bombardment of the target, and achieves a magnetron sputtering electrode capable of depositing a thin film on a relatively large rectangular substrate in a stationary state without moving the substrate. Thus, reduction in the size of the apparatus, waste of the rectangular target due to non-uniform erosion, heterogeneity of the thin film on the substrate, and reduction of generation of dust particles can be obtained.

REFERENCES:
patent: 3965093 (1976-05-01), McLeod
patent: 4094761 (1978-06-01), Wilson
patent: 4116791 (1978-09-01), Zega
patent: 4392939 (1983-07-01), Crombeen et al.
patent: 4407713 (1983-10-01), Zega
patent: 4437966 (1984-03-01), Hope et al.
patent: 4600492 (1986-07-01), Ooshio et al.
patent: 5196105 (1993-03-01), Feuerstein et al.
"Cylindrical Magnetron Sputtering", Thornton et al, 1978 Academic Press,Inc.; pp. 75-113.
"Thin Film Handbook", pp. 186-189.
"Dry Process application Technology", pp. 63-64.

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