Semiconductor device manufacturing: process – Forming schottky junction – Using refractory group metal
Reexamination Certificate
2005-01-04
2005-01-04
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Forming schottky junction
Using refractory group metal
C438S627000
Reexamination Certificate
active
06838364
ABSTRACT:
A method of forming inter-level contacts or vias between metal layers using a tungsten film deposited into the via using non-collimated sputter deposition. The sputter chamber is configured with a pressure of about 1 mTorr to about 10 mTorr with an inert gas flow of at least 25 cm3/min to about 150 cm3/min. Shielding inside the chamber is coated with a material, preferably, aluminum oxide, that promotes adhesion of tungsten to the shielding. An adhesion layer of titanium may be included prior to deposition of the tungsten film. Non-collimated sputter deposition increases the target to substrate distance inside the sputter chamber; reduces the heating effect associated with traditional collimated sputtering; and provides more robust diffusion barriers.
REFERENCES:
patent: 3900944 (1975-08-01), Fuller et al.
patent: 4394678 (1983-07-01), Winchell, II et al.
patent: 4404235 (1983-09-01), Tarng et al.
patent: 4478881 (1984-10-01), Bartur et al.
patent: 4532702 (1985-08-01), Gigante et al.
patent: 4650696 (1987-03-01), Raby
patent: 4659427 (1987-04-01), Barry et al.
patent: 4666737 (1987-05-01), Gimpelson et al.
patent: 4782380 (1988-11-01), Shankar et al.
patent: 4804560 (1989-02-01), Shioya et al.
patent: 4857481 (1989-08-01), Tam et al.
patent: 4884123 (1989-11-01), Dixit et al.
patent: 4960732 (1990-10-01), Dixit et al.
patent: 5008216 (1991-04-01), Huang et al.
patent: 5227335 (1993-07-01), Holschwandner et al.
patent: 5342652 (1994-08-01), Foster et al.
patent: 5391275 (1995-02-01), Mintz
patent: 5434110 (1995-07-01), Foster et al.
patent: 5434451 (1995-07-01), Dalal et al.
patent: 5585673 (1996-12-01), Joshi et al.
patent: 5622894 (1997-04-01), Jang et al.
patent: 5770519 (1998-06-01), Klein et al.
patent: 5854140 (1998-12-01), Jaso et al.
patent: 5953629 (1999-09-01), Imazeki et al.
patent: 6197167 (2001-03-01), Tanaka
patent: 1 094 504 (2001-04-01), None
Brodsky Stephen B.
Murphy William J.
Rutten Matthew J.
Strippe David C.
Vanslette Daniel S.
Coleman W. David
DeLio & Peterson LLC
Reynolds Kelly M.
Sabo William D.
LandOfFree
Sputtered tungsten diffusion barrier for improved... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Sputtered tungsten diffusion barrier for improved..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sputtered tungsten diffusion barrier for improved... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3421010