Spring devices – Vehicle – Leaf
Reexamination Certificate
2005-03-15
2005-03-15
Sicono, Robert A. (Department: 3683)
Spring devices
Vehicle
Leaf
C438S117000, C438S652000, C257S181000
Reexamination Certificate
active
06866255
ABSTRACT:
Methods are disclosed for fabricating spring structures that minimize helical twisting by reducing or eliminating stress anisotropy in the thin films from which the springs are formed through manipulation of the fabrication process parameters and/or spring material compositions. In one embodiment, isotropic internal stress is achieved by manipulating the fabrication parameters (i.e., temperature, pressure, and electrical bias) during spring material film information to generate the tensile or compressive stress at the saturation point of the spring material. Methods are also disclosed for tuning the saturation point through the use of high temperature or the incorporation of softening metals. In other embodiments, isotropic internal stress is generated through randomized deposition (e.g., pressure homogenization) or directed deposition techniques (e.g., biased sputtering, pulse sputtering, or long throw sputtering). Cluster tools are used to separate the deposition of release and spring materials.
REFERENCES:
patent: 3842189 (1974-10-01), Southgate
patent: 3952404 (1976-04-01), Matunami
patent: 4189342 (1980-02-01), Kock
patent: 4423401 (1983-12-01), Mueller
patent: 4468014 (1984-08-01), Strong
patent: 4821148 (1989-04-01), Kobayashi et al.
patent: 5280139 (1994-01-01), Suppelsa et al.
patent: 5399232 (1995-03-01), Albrecht et al.
patent: 5414298 (1995-05-01), Grube et al.
patent: 5465611 (1995-11-01), Ruf et al.
patent: 5513518 (1996-05-01), Lindsay
patent: 5515719 (1996-05-01), Lindsay
patent: 5534662 (1996-07-01), Peacock et al.
patent: 5612491 (1997-03-01), Lindsay
patent: 5613861 (1997-03-01), Smith et al.
patent: 5665648 (1997-09-01), Little
patent: 5780885 (1998-07-01), Diem et al.
patent: 5831181 (1998-11-01), Majumdar et al.
patent: 5848685 (1998-12-01), Smith et al.
patent: 5914218 (1999-06-01), Smith et al.
patent: 5939623 (1999-08-01), Muramatsu et al.
patent: 5944537 (1999-08-01), Smith et al.
patent: 5959516 (1999-09-01), Chang et al.
patent: 5960147 (1999-09-01), Muramatsu et al.
patent: 5979892 (1999-11-01), Smith
patent: 6011261 (2000-01-01), Ikeda et al.
patent: 6117694 (2000-09-01), Smith et al.
patent: 6184065 (2001-02-01), Smith et al.
patent: 6184699 (2001-02-01), Smith et al.
patent: 6194774 (2001-02-01), Cheon
patent: 6213789 (2001-04-01), Chua et al.
patent: 6238533 (2001-05-01), Satitpunwaycha et al.
patent: 6249039 (2001-06-01), Harvey et al.
patent: 6252175 (2001-06-01), Khandros
patent: 6264477 (2001-07-01), Smith et al.
patent: 6290510 (2001-09-01), Fork et al.
patent: 6299462 (2001-10-01), Biegelsen
patent: 6352454 (2002-03-01), Kim et al.
patent: 6392524 (2002-05-01), Biegelsen et al.
patent: 6441359 (2002-08-01), Cozier et al.
patent: 6455885 (2002-09-01), Lin
patent: 6499216 (2002-12-01), Fjelstad
patent: 6505398 (2003-01-01), Park
patent: 6528350 (2003-03-01), Fork
patent: 6528785 (2003-03-01), Nakayama et al.
patent: 6556648 (2003-04-01), Bal et al.
patent: 6578410 (2003-06-01), Israelachvili
patent: 20020013070 (2002-01-01), Fork et al.
patent: 20020040884 (2002-04-01), Hantschel et al.
patent: 20020047091 (2002-04-01), Hantschel et al.
patent: 20020055282 (2002-05-01), Elridge et al.
patent: 20020079445 (2002-06-01), Hantschel et al.
patent: 20030010615 (2003-01-01), Fork et al.
patent: WO 9918445 (1999-04-01), None
patent: WO 0033089 (2000-06-01), None
patent: WO 0148870 (2001-07-01), None
Zou et al., “Plastic Deformation Magnetic Assembly (PDMA) of Out-of-Plane Microstructures: Technology and Application,” IEEE Journal of Microelectromechanical Systems, vol. 10, No. 2, Jun. 2001, pp. 302-309.
Chen et al., “Nanostructure patterns written in polycarbonate by a bent optical fiber probe,” J. Vac. Sci. Technol. B 19(6), Nov./Dec. 2001, pp. 2299-2300.
Kim et al., “Realization of High-Q Inductors Using Wirebonding Technology,” School of Electronics Engineering, Ajou University, Korea, 4 pgs.
Datta, Madhav, “Microfabrication by electrochemical metal removal,” IBM J. Res. Develop. vol. 42, No. 5, Sep. 1998, pp. 655-669.
Larson, Lawrence E., ed.,RF and Microwave Circuit Design for Wireless Communications, Artech House: Boston 1997, 8 pgs.
Zhang et al., “A MEMS nanoplotter with high-density parallel dip-pen nanolithography probe arrays,” IOP Publishing, Nanotechnology 13 (2002), pp. 212-217.
Craninckx et al., “A CMOS 1.8GHz Low-Phase-Noise-Voltage-Controlled Oscillator with Prescaler,” 1995 IEEE International Solid-State Circuits Conference, Digest of Technical Papers, pp. 266-268.
Rogner et al., “The LIGA technique-what are the new opportunities,” J. Micromech. Microeng. 2 (1992), pp. 133-140.
Young et al., “Monolithic High-Performance Three-Dimensional Coil Inductors for Wireless Communication Applications,” pp. 3.5.1-3.5.4.
Young et al., “A Low-Noise RF Voltage-Controlled Oscillator Using On-Chip High-Q Three-Dimensional Coil Inductor and Micromachined Variable Capacitor,” pp. 128-131.
Nguyen et al., “Si IC-Compatible Inductors and LC Passive Filters,” IEEE Journal of Solid-State Circuits, vol. 25, No. 4, Aug. 1990, pp. 1028-1031.
Chang et al., “Large Suspended Inductors on Silicon and Their Use in a 2-μm CMOS RF Amplifier,” IEEE Electron Device Letters, vol. 14, No. 5, May 1993, pp. 246-248.
Nguyen et al., “A 1.8-GHz Monolithic LC Voltage-Controlled Oscillator,” IEEE Journal of Solid-State Circuits, vol. 27, No. 3, Mar. 1992, pp. 444-450.
“Pinnacle Plus+ Pulsed DC Power Supply: New Horizons in Reactive Sputtering Performance,” Advanced Energy Industries, Inc., 4 pgs.
Scholl, “Power Supplies for Pulsed Plasma Technologies: State-of-the-Art and Outlook,” Advanced Energy Industries, Inc. 1999, pp. 1-8.
Fork David K.
Littau Karl
Solberg Scott
Bever Patrick T.
Bever Hoffman & Harms LLP
Kramer Devon
Sicono Robert A.
Xerox Corporation
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