Sputter-etching method employing fluorohalogenohydrocarbon etchi

Details Sputter-etching method employing fluorohalogenohydrocarbon etchi Sputter-etching method employing fluorohalogenohydrocarbon etchi

1974-08-08

1976-10-05

Mack, John H.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

C23C 1500

Patent

active

039843017

ABSTRACT:
On sputter-etching a substrate, fluorochloro- or fluorobromohydrocarbon gas is used as an etching gas in a chamber evacuated to a pressure of at least as low as 10.sup..sup.-5 Torr. The etching gas is introduced at a pressure between 5 .times. 10.sup..sup.-3 and 5 .times. 10.sup..sup.-2 Torr. Use is also made of a planar electrode for supporting the substrate and responsive to an r.f. power supplied thereto for producing a glow discharge.

REFERENCES:
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patent: 3474021 (1969-10-01), Davidse et al.
patent: 3477936 (1969-11-01), Gillery et al.
patent: 3598710 (1971-08-01), Davidse
patent: 3640812 (1972-02-01), Vossen, Jr. et al.
patent: 3676317 (1972-07-01), Harkins, Jr.
patent: 3730873 (1973-05-01), Pompei et al.
patent: 3795557 (1974-03-01), Jacob
patent: 3849276 (1974-11-01), Greiner
patent: 3867216 (1975-02-01), Jacob
patent: 3880684 (1975-04-01), Abe
L. Maissel et al., "Handbook of Thin Film Technology," McGraw-Hill Book Co., New York, 1970, pp. 4-32.

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