Sputter etching apparatus having a second electrically floating

Details Sputter etching apparatus having a second electrically floating Sputter etching apparatus having a second electrically floating

1985-02-20

1986-11-25

Niebling, John F.

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

156345, C23C 1400

Patent

active

046247670

ABSTRACT:
Sputter etching apparatus which includes a sputter etching electrode for mounting a substrate in a vacuum treatment chamber and another electrode oppositely facing the sputter etching electrode. The other electrode is in an electrically floating condition; that is, it is electrically insulated from contact with the chamber structure and from direct connection with the power source. Plasma generated is confined between the two electrodes. An annular magnetic field can be generated surrounding the space confining the plasma to further concentrate it.

REFERENCES:
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patent: 4025410 (1977-05-01), Stewart
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patent: 4333814 (1982-06-01), Kuyel
patent: 4349409 (1982-09-01), Shibayama et al.
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patent: 4426274 (1984-01-01), Ephrath
patent: 4431473 (1984-02-01), Ohano et al.
"High-Rate Reactive Ion Etching of SiO.sub.2 Using a Magnetron Discharge", Japanese Journal of Applied Physics, Hirike et al, vol. 20, No. 11.
"Studies on the Damage of Si Surface Caused by Reactive Sputter Etching", Journal of the Japan Society of Precision Engineering, vol. 47, No. 12, by Miyake et al.
IBM Technical Disclosure Bulletin, vol. 26, No. 2, Jul. 1983, pp. 866-869.
Japan Abstract 55-38043.
Japan Abstract 58-22381, Apr. 23, 1983; vol. 7, No. 97.

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