Sputter-deposited nickel layer

Details Sputter-deposited nickel layer Sputter-deposited nickel layer

1996-05-20

1999-03-02

Zimmerman, John J.

Stock material or miscellaneous articles

All metal or with adjacent metals

Composite; i.e., plural, adjacent, spatially distinct metal...

20419215, 428680, 428672, 428332, B32B 1504, C23C 1414, C23C 1416

Patent

active

058768610

ABSTRACT:
Disclosed is a nickel layer formed on a substrate by sputtering, in which nickel layer a percent ratio of an X-ray diffraction peak intensity of the (200) plane of the nickel layer to that of the (111) plane of the nickel layer is not less than 10%. This nickel layer has a reduced stress, and therefore, lessens a bending of a substrate. The nickel layer is formed by a process for sputtering nickel on a substrate, comprising supplying an argon gas into a vacuum chamber, adjusting a pressure of the argon gas in the vacuum chamber to a predetermined value, ionizing the argon gas, bombarding a target containing nickel with the ionized argon gas, to sputter nickel atoms, and depositing the sputtered nickel atoms onto the substrate, wherein the predetermined pressure of the argon gas is not lower than 12 mTorr.

REFERENCES:
patent: 3461054 (1969-08-01), Vratny
patent: 3516915 (1970-06-01), Mayer et al.
patent: 3945903 (1976-03-01), Svendor et al.
patent: 3982908 (1976-09-01), Arnold
patent: 4513905 (1985-04-01), Nowicki et al.
patent: 4588343 (1986-05-01), Garrett
patent: 4610932 (1986-09-01), Haynes et al.
patent: 4816124 (1989-03-01), Mahabe et al.
patent: 4994880 (1991-02-01), Kato et al.
patent: 5361971 (1994-11-01), Williams et al.
patent: 5614291 (1997-03-01), Kondo
Thornton et al., "Internal Stresses in Ti, Ni, Mo, etc." J. Vac. Sci. Technol. vol. 14, Jan. 1977, pp. 164-168.
T. Takeuchi et al, "Stress in Thin Tantalum Films Deposited Magnetron Sputtering" pp. 612-618 (Jul., 1987).
T. Yoneyama et al, "Thin Film Structure and Adhesion of Sputtered Thin Layers on Silicon", Thin Solid Films, 193/194(1990) pp. 1056-1064 (No Month).
S. Shinzato et al, Proc. 7th ICVW, 1982, Tokyo, Japan, pp. 172-179 (No Month).
D.W. Hoffman et al, Thin Solid Films, 45 (1977) pp. 367-396 (No Month).
D.W. Hoffman et al, Journal Vacuum Science Technology, 20 (3) Mar. 1982, pp. 355-358.
John A.Thornton et al, "Internal Stresses in Titanium, Nickel, Molybdenum and Tantalum Films Deposited by Cylindrical Magnetron Sputtering", Journal of Vacuum Science and Technology, Jan./Feb. 1977, pp. 164-168.
B. Navinsek, 637 "Stainless-Steel, Nickel and Brass Protective Films Produced by Cathode Sputtering", Thin Solid Films, Nov. 1972, pp. 367-372.
Y. K. Chao et al, "Porosity in Thin Ni/Au Metallization Layers", Journal of Vacuum Science and Technology, May/Jun. 1987, pp. 337-372.
D. L. Packwood et al. "Contact Metallization for Producing Stable Bipolar Microwave Transistors", Journal of Vacuum Science and Technology, May/Jun. 1985, pp. 799-802.
P.V. Plunkett et al, "Stresses in Sputter Deposited Nickel and Copper Oxide Thin Films", Thin Solid Film, Nov. 1979, pp. 121-128.

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