Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1994-07-28
1997-08-26
Breneman, R. Bruce
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
20429803, 20419212, 20419213, 20419223, C23C 1438
Patent
active
056607008
ABSTRACT:
A sputtering method comprises applying a negative voltage intermittently in a constant periodic cycle to a cathode disposed in a vacuum chamber, wherein the negative voltage is intermittently applied so that a time during which the negative voltage is not applied includes a time during which the voltage is controlled to be zero volt in a range of from 10 .mu.s to 10 ms, and the zero voltage time is equal to or longer than the time required by one arcing from its generation to extinction.
REFERENCES:
patent: 4693805 (1987-09-01), Quazi
patent: 5286360 (1994-02-01), Szczyrbowski et al.
patent: 5303139 (1994-04-01), Mark
Greiner et al. (IBM Techical Disclosure Bulletin vol. 17, No. 7 Dec. 1974 pp. 2172-2173).
Patent Abstracts of Japan, vol. 14, No. 90 (C-0691), Feb. 20, 1990, JP-A-01 301 856, Dec. 6, 1989.
CIP 93 Proceedings, Jun. 1993, pp. 66-68, B. Stauder, et al., "A Method for Suppressing the Hysteresis Effect in Reactive Sputtering".
Third International Conference on Plasma Surface Engineering, Oct. 1992, Surface and Coatings Technology, vol. 59, 1993, pp. 177-182, P. Frach, et al., "Aspects and Results of Long-Term Stable Deposition of Al203 with High Rate Pulsed Reactive Magnetron Sputtering".
Ando Ei'ichi
Osaki Hisashi
Oyama Takuji
Shimizu Jun-ichi
Takaki Satoru
Asahi Glass Company Ltd.
Breneman R. Bruce
McDonald Rodney G.
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