Sputter coating apparatus having improved target electrode struc

Details Sputter coating apparatus having improved target electrode struc Sputter coating apparatus having improved target electrode struc

1973-05-24

1976-01-20

Mack, John H.

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

204192, C23c 1500

Patent

active

039336441

ABSTRACT:
A gaseous discharge sputter coating apparatus is described for sequentially sputtering different materials onto discrete batches of substrate objects. The apparatus includes a chamber defining a controlled environment capable of sustaining a gaseous discharge, a table within the chamber for supporting separate batches of substrate objects, and means for sustaining a gaseous discharge within the chamber. A plurality of target electrode structures is also provided, each of which has a surface in the chamber which has a layer on it of one of the materials desired to be coated onto the substrate objects. The target electrode structures are part of the wall of the controlled environment chamber, and each includes an insulating material separating it from the remainder of the wall. In order to obviate the necessity of including a ground shield around each of the target electrodes, only that portion of the electrode within the chamber having the material on it has power applied to it to cause the sputtering. The target electrode structures are detachably secured to the remaining portion of the wall so that they may be removed for servicing.

REFERENCES:
patent: 3121852 (1964-02-01), Boyd et al.
patent: 3233137 (1966-02-01), Anderson et al.
patent: 3388053 (1968-06-01), Sinclair et al.
patent: 3528906 (1970-09-01), Cash et al.
patent: 3558467 (1971-01-01), Jackson
patent: 3652444 (1972-02-01), Lester et al.
patent: 3677924 (1972-07-01), Cash et al.
Davidse, "Theory and Practice of RF Sputtering," Vacuum, Vol. 17, No. 3, p. 142, Mar. 1967.

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