Sputter cathode for application of radioactive material

Radiant energy – Irradiation of objects or material – Ion or electron beam irradiation

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H01J 37317

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active

058941339

ABSTRACT:
Making a sputter cathode for applying a radioactive material includes obtaining a wafer containing a base material having a stable precursor dissolved therein. The base material is transmutable into a material having a relatively short atomic half-life. The wafer is atomically activated to transmute a portion of the stable precursor into a radioactive material. The base material may be silicon or germanium. The stable precursor may be .sup.31 P and the radioactive material may be .sup.32 P. Atomically activating the wafer may include exposing the wafer to a source of thermal neutrons by, for example, placing the wafer in a high-flux nuclear reactor for approximately four weeks.

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