Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Reexamination Certificate
2006-08-29
2006-08-29
Abraham, Fetsum (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
C257S184000, C257S292000, C257S461000
Reexamination Certificate
active
07098489
ABSTRACT:
A plurality of N-type diffusion layers are formed a specified distance apart on a P-type semiconductor layer. A P-type leak prevention layer formed between at least N-type diffusion layers prevents leaking between the diffusion layers. A dielectric film is formed in at least a light incident area on a P-type semiconductor layer including the diffusion layers and the leak prevention layer. Accordingly, provided are a split type light receiving element positively functioning as a split type light receiving element even when charge is accumulated in the dielectric film and having a uniform sensitivity throughout the entire area on a light receiving surface, and a circuit-built-in light receiving element and an optical disk device using the split type light receiving element.
REFERENCES:
patent: 5811842 (1998-09-01), Funaba
patent: 5880494 (1999-03-01), Watanabe
patent: 6147390 (2000-11-01), Nakano et al.
patent: 6348720 (2002-02-01), Okada
patent: 6376871 (2002-04-01), Arai
patent: 6448104 (2002-09-01), Watanabe
patent: 6492702 (2002-12-01), Fukushima et al.
patent: 6713756 (2004-03-01), Ymamoto et al.
patent: 0778621 (1997-06-01), None
patent: 0911881 (1999-04-01), None
patent: 9-213920 (1997-08-01), None
patent: 9-283787 (1997-10-01), None
patent: 9-289333 (1997-11-01), None
patent: 10-125974 (1998-05-01), None
patent: 11-177138 (1999-07-01), None
patent: 11-307753 (1999-11-01), None
patent: 2001-60713 (2001-03-01), None
patent: 2001-148503 (2001-05-01), None
patent: 2001-284629 (2001-10-01), None
Hayashida Shigeki
Morioka Tatsuya
Ohkubo Isamu
Tani Yoshihiko
Abraham Fetsum
Birch & Stewart Kolasch & Birch, LLP
Sharp Kabushiki Kaisha
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