1987-01-28
1988-06-28
Edlow, Martin H.
357 237, 357 59, H01L 2702, H01L 2978, H01L 2904
Patent
active
047543140
ABSTRACT:
A CMOS device wherein the NMOS devices are bulk devices and the PMOS devices are SOI devices. The PMOS devices are formed with their channel regions in a silicon-on-insulator layer, preferably a laterally recrystallized annealed-polysilicon layer over a silicon dioxide layer.
REFERENCES:
patent: 4333099 (1982-06-01), Tanguay et al.
patent: 4472729 (1984-09-01), Shibata et al.
Malhi Satwinder S.
Scott David B.
Anderson Rodney M.
Edlow Martin H.
Heiting Leo N.
Limanek Robert P.
Sharp Melvin
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