1978-01-30
1979-08-07
Wojciechowicz, Edward J.
357 22, 357 23, 357 41, H01L 2906
Patent
active
041639880
ABSTRACT:
A split gate V groove FET device mounted in a substrate with a first terminal comprising a body of a first conductive material in the apex of said V groove, said first terminal connected to a first conductive channel in a first side of said V groove to form a first transistor and said first terminal connected to a second conductive channel in a second side of said V groove to form a second transistor.
REFERENCES:
patent: 4003036 (1977-01-01), Jenne
patent: 4065783 (1977-12-01), Ouyang
patent: 4070690 (1978-01-01), Wickstrom
Reuter James L.
Yeh Keming W.
Taylor Ronald L.
Wojciechowicz Edward J.
Xerox Corporation
LandOfFree
Split gate V groove FET does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Split gate V groove FET, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Split gate V groove FET will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1527058