Split gate V groove FET

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Details

357 22, 357 23, 357 41, H01L 2906

Patent

active

041639880

ABSTRACT:
A split gate V groove FET device mounted in a substrate with a first terminal comprising a body of a first conductive material in the apex of said V groove, said first terminal connected to a first conductive channel in a first side of said V groove to form a first transistor and said first terminal connected to a second conductive channel in a second side of said V groove to form a second transistor.

REFERENCES:
patent: 4003036 (1977-01-01), Jenne
patent: 4065783 (1977-12-01), Ouyang
patent: 4070690 (1978-01-01), Wickstrom

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