Split gate type transistor memory device

Details Split gate type transistor memory device Split gate type transistor memory device

1997-03-27

1999-08-10

Fears, Terrell W.

Static information storage and retrieval

Floating gate

3651851, G11C 1300

Patent

active

059368837

ABSTRACT:
Split gate type transistor made by the steps of: forming a semiconductor substrate; forming a floating gate electrode over the semiconductor substrates the floating gate electrode having at least one lateral face portion; and nitrating the at least one lateral face portion to form a nitrogen-containing layer.

REFERENCES:
patent: 4366555 (1982-12-01), Hu
patent: 5029130 (1991-07-01), Yeh
Electronics Letters; Aug. 30, 1990; vol. 26, No. 18; Highly Reliable Thin Nitrided SI0.sub.2 Films Formed by Rapid Thermal Processing an N.sub.2 O Ambient.
High Performance Dual-gate Sub-halfmicron CMOSFETs with 6 nm-thick Nitrided Si0.sub.2 Films in an N.sub.2 O Ambient; l990.
High-Performance Scaled Flash-Type EEPROMs with Heavily Oxynitrided Tunnel Oxide Films; l992.
Oki Elelctric Research and Development Report, published on Oct. l993; Oxynitrided Tunnel-Oxide Film for Flash-Memory.

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