Split gate type transistor memory device

Static information storage and retrieval – Floating gate

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

3651851, G11C 1300

Patent

active

059368837

ABSTRACT:
Split gate type transistor made by the steps of: forming a semiconductor substrate; forming a floating gate electrode over the semiconductor substrates the floating gate electrode having at least one lateral face portion; and nitrating the at least one lateral face portion to form a nitrogen-containing layer.

REFERENCES:
patent: 4366555 (1982-12-01), Hu
patent: 5029130 (1991-07-01), Yeh
Electronics Letters; Aug. 30, 1990; vol. 26, No. 18; Highly Reliable Thin Nitrided SI0.sub.2 Films Formed by Rapid Thermal Processing an N.sub.2 O Ambient.
High Performance Dual-gate Sub-halfmicron CMOSFETs with 6 nm-thick Nitrided Si0.sub.2 Films in an N.sub.2 O Ambient; l990.
High-Performance Scaled Flash-Type EEPROMs with Heavily Oxynitrided Tunnel Oxide Films; l992.
Oki Elelctric Research and Development Report, published on Oct. l993; Oxynitrided Tunnel-Oxide Film for Flash-Memory.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Split gate type transistor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Split gate type transistor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Split gate type transistor memory device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1126459

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.