Static information storage and retrieval – Floating gate
Patent
1997-03-27
1999-08-10
Fears, Terrell W.
Static information storage and retrieval
Floating gate
3651851, G11C 1300
Patent
active
059368837
ABSTRACT:
Split gate type transistor made by the steps of: forming a semiconductor substrate; forming a floating gate electrode over the semiconductor substrates the floating gate electrode having at least one lateral face portion; and nitrating the at least one lateral face portion to form a nitrogen-containing layer.
REFERENCES:
patent: 4366555 (1982-12-01), Hu
patent: 5029130 (1991-07-01), Yeh
Electronics Letters; Aug. 30, 1990; vol. 26, No. 18; Highly Reliable Thin Nitrided SI0.sub.2 Films Formed by Rapid Thermal Processing an N.sub.2 O Ambient.
High Performance Dual-gate Sub-halfmicron CMOSFETs with 6 nm-thick Nitrided Si0.sub.2 Films in an N.sub.2 O Ambient; l990.
High-Performance Scaled Flash-Type EEPROMs with Heavily Oxynitrided Tunnel Oxide Films; l992.
Oki Elelctric Research and Development Report, published on Oct. l993; Oxynitrided Tunnel-Oxide Film for Flash-Memory.
Fukase Kenji
Kurooka Kazumi
Fears Terrell W.
Sanyo Electric Co,. Ltd.
LandOfFree
Split gate type transistor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Split gate type transistor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Split gate type transistor memory device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1126459