Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-06-06
2010-10-05
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185180, C365S185050
Reexamination Certificate
active
07808839
ABSTRACT:
A split gate NAND flash memory structure is formed on a semiconductor substrate of a first conductivity type. The NAND structure comprises a first region of a second conductivity type in the substrate with a second region of the second conductivity type in the substrate, spaced apart from the first region. A continuous first channel region is defined between the first region and the second region. A plurality of floating gates are spaced apart from one another with each positioned over a separate portion of the channel region. A plurality of control gates are provided with each associated with and adjacent to a floating gate. Each control gate has two portions: a first portion over a portion of the channel region and a second portion over the associated floating gate and capacitively coupled thereto.
REFERENCES:
patent: 5029130 (1991-07-01), Yeh
patent: 6151248 (2000-11-01), Harari et al.
patent: 6272050 (2001-08-01), Cunnuingham et al.
patent: 6825084 (2004-11-01), Ogura et al.
patent: 6992929 (2006-01-01), Chen et al.
patent: 7247907 (2007-07-01), Gao et al.
patent: 7544569 (2009-06-01), Gao et al.
patent: 2004/0061167 (2004-04-01), Mantha
patent: 2004/0125653 (2004-07-01), Tran et al.
patent: 2004/0232473 (2004-11-01), Hsu et al.
C.Y. Shu et al., “Split-Gate NAND Flash Memory At 120 nm Technology Node Featuring Fast Programming And Erase,” 2004 Symposium, VLSI Technology Digest Of Technical Papers, pp. 78-79.
Chen Changyuan
Cooksey John W.
Gao Feng
Lee Dana
Lin Ya-Fen
DLA Piper (LLP) US
Graham Kretelia
Ho Hoai V
Silicon Storage Technology, Inc.
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