Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1996-07-24
1998-09-15
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257401, H01L 2976
Patent
active
058083170
ABSTRACT:
Horizontally redundant thin film transistors (TFTS) are disclosed having a U-shaped split gate with at least two elongated sections separated by a slit. Dielectric and semiconductor layers are respectively formed over the split gate. The semiconductor layer has redundant channels located over the split gate and separated by the slit. A common source is formed over the slit and is separated from at least two drains by the redundant channels. The drains are formed over an outer periphery of the elongated sections. The source and drains are self-aligned to the split gate to minimize the source-to-gate overlap. Source and drain contacts are formed over the source and drains, respectively. The horizontally redundant TFT also has dielectric sections formed over the semiconductor layer and aligned with the split gate. The horizontally redundant has large W/L and I.sub.on /I.sub.off ratios, and occupies a small area, which are particularly useful featutes in forming high quality displays.
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International Business Machines - Corporation
Prenty Mark V.
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