Split gate flash memory cell and manufacturing method thereof

Details Split gate flash memory cell and manufacturing method thereof Split gate flash memory cell and manufacturing method thereof

2005-08-02

2005-08-02

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C438S249000, C438S392000, C438S561000, C438S563000

Reexamination Certificate

active

06924204

ABSTRACT:
A method for fabricating a buried plate of a deep trench capacitor is described. A substrate having a deep trench therein is provided. A doped layer is formed on the surface of the deep trench and a material layer is formed on the doped layer. A passivation layer is formed on the sidewall of the deep trench that is not covered by the material layer. After removing the material layer, a thermal process is conducted to drive-in the dopants in the doped layer to the substrate to form a doped region, wherein the doped region serves as a buried plate of the deep trench capacitor. The doped layer also reacts with the substrate to form an oxide layer. After removing the oxide layer, a bottle-shaped deep trench is formed.

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