Split-gate flash memory cell

Details Split-gate flash memory cell Split-gate flash memory cell

1994-05-18

1996-02-27

Yoo, Do Hyun

Static information storage and retrieval

Floating gate

357316, 357320, 437 52, G11C 1300

Patent

active

054954410

ABSTRACT:
This patent discloses a split-gate flash memory cell having a vertical isolation gate and a process for making it. The inventive cell has better control and a denser memory array than conventional cells. By use of a vertical isolation gate a smaller cell size is obtained. The memory cell has a floating gate transistor formed in a substrate having a channel extending underneath a floating gate, and a vertical isolation transistor formed in the substrate having a channel parallel to a trench holding a portion of a polysilicon control gate and orthogonal to the channel of the floating gate transistor.

REFERENCES:
patent: 4970689 (1990-11-01), Kenney
patent: 5291439 (1994-03-01), Kauffmann et al.
patent: 5313421 (1994-05-01), Guterman et al.
patent: 5343063 (1994-08-01), Yuan et al.

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