Spiral resistor integrated on a semiconductor substrate

Details Spiral resistor integrated on a semiconductor substrate Spiral resistor integrated on a semiconductor substrate

1994-08-08

1996-03-12

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257488, 257489, 257577, H01L 2900

Patent

active

054988993

ABSTRACT:
A spiral resistor being of a type formed on a semiconductor substrate to withstand high voltages, comprises at least one thin field-plate layer covering said substrate between adjacent turns of the resistor. This prevents the well-known phenomenon of the "phantom gate" from occurring which would result in the characteristics of spiral resistors deteriorating over time.

REFERENCES:
patent: 4423433 (1983-12-01), Imaizumi et al.
patent: 4792840 (1988-12-01), Nadd
patent: 5053743 (1991-10-01), Mille et al.
Patent Abstracts of Japan, vol. 6, No. 12 (E-91) (890) Jan. 23, 1982, and JP-A-56 133 863 (Citizen Tokei K.K.) Oct. 20, 1981.

Affiliated with

Also associated with

Rating

Spiral resistor integrated on a semiconductor substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Spiral resistor integrated on a semiconductor substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Spiral resistor integrated on a semiconductor substrate will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2102596