Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2011-07-12
2011-07-12
Fahmy, Wael M (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S536000, C257S622000, C257S381000, C257S758000, C257SE21022, C257SE21520, C257SE23007, C438S238000, C438S381000, C438S026000, C438S003000, C438S108000, C438S106000, C438S622000
Reexamination Certificate
active
07977767
ABSTRACT:
An inductor includes an inductor wiring made of a metal layer and having a spiral planar shape. In a cross-sectional shape in a width direction of the inductor wiring, the inductor wiring has a larger film thickness at least in its inner side end than in its middle part.
REFERENCES:
patent: 4703383 (1987-10-01), Katou et al.
patent: 5065270 (1991-11-01), Koyanagi et al.
patent: 5446311 (1995-08-01), Ewen et al.
patent: 6246541 (2001-06-01), Furuichi et al.
patent: 6847066 (2005-01-01), Tahara et al.
patent: 7087977 (2006-08-01), Nakayama et al.
patent: 7217987 (2007-05-01), Nakayama et al.
patent: 7791165 (2010-09-01), Tanaka
patent: 2005/0098851 (2005-05-01), Nakayama et al.
patent: 2007/0222550 (2007-09-01), Fujiwara et al.
patent: 2004-207602 (2004-07-01), None
patent: 3577222 (2004-07-01), None
patent: 2005-268490 (2005-09-01), None
Dunn, J.S. et al., “Foundation of rf CMOS and SiGe BiCMOS technologies,” IBM J. Res. & Dev., vol. 47, No. 2/3, Mar./May 2003.
Burghartz, J.N. et al., “Novel Substrate Contact Structure for High-Q Silicon-Integrated Spiral Inductors,” IBM T.J. Watson Research Center, IEEE, 1997.
Burghartz, Joachim N., “ Progress in RF Inductors on Silicon—Understanding Substrate Losses,” IBM Research Division, T.J. Watson Research Center, IEEE 1998.
Coolbaugh, D. et al., “Advanced Passive Devices for Enhanced Integrated RF Circuit Performance,” IEEE Radio Frequency Integrated Circuits Symposium, 2002.
Harame D. et al., “Imagine the Future in Telecommunications Technology,” 2003.
Iwadate Hidenori
Kajiyama Masaoki
Matsunaga Tomohiro
Nabeshima Yutaka
Armand Marc
Fahmy Wael M
McDermott Will & Emery LLP
Panasonic Corporation
LandOfFree
Spiral planar inductor and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Spiral planar inductor and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Spiral planar inductor and manufacturing method thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2719817