Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2008-03-11
2008-03-11
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S014000, C257SE43001, C257S421000, C438S624000, C365S158000
Reexamination Certificate
active
11488752
ABSTRACT:
A semiconductor device including: a substrate comprising silicon; a channel region formed on the substrate; a spin injector formed on the substrate at a first side of the channel region and configured to diffuse a spin-polarized current into the channel region; a spin detector formed on the substrate at a second side of the channel region and configured to receive the spin polarized current from the channel region; and a gate formed on the substrate in an area of the channel region.
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Ganguly Swaroop
Kaushal Sanjeev
Sugishima Kenji
Jackson Jerome
Tokyo Electron Limited
Valentine Jami M
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