Spin valves with antiferromagnetic exchange pinning and high uni

Details Spin valves with antiferromagnetic exchange pinning and high uni Spin valves with antiferromagnetic exchange pinning and high uni

1998-05-27

2000-09-12

Kiliman, Leszek

Stock material or miscellaneous articles

Composite

Of inorganic material

428694R, 428694T, 428694TS, 428694TM, 428900, 427128, 427129, 427130, 360113, 338 32R, 324252, 204192, G11B 566

Patent

active

061175692

ABSTRACT:
An SV sensor having a reference (pinned) layer formed of a first high uniaxial anisotropy ferromagnetic material, such as Co--Fe, and a keeper layer formed of a second high uniaxial anisotropy ferromagnetic material, such as Ni--Fe--Nb. Lapping induced stress in the high positive magnetostriction Co--Fe layer generates a uniaxial anisotropy field in the pinned layer resulting in enhanced pinned layer magnetization. This uniaxial anisotropy field adds to the exchange field from an antiferromagnetic layer resulting in a substantially increased pinning field over the pinning field from the exhange interaction alone. The added uniaxial anisotropy field also improves the stability of the SV sensor at elevated temperatures since the uniaxial field is determined by a Curie temperature significantly higher than the blocking temperatures of antiferromagnetic materials. Lapping induced stress in the high positive magnetostriction Ni--Fe--Nb layer generates a uniaxial anisotropy field in the keeper layer providing more uniform magnetization and therefore better flux cancellation. The high electrical resistivity of the Ni--Fe--Nb keeper layer has the further benefit of reducing sense current shunting by the keeper layer.

REFERENCES:
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patent: 5528440 (1996-06-01), Fontana et al.
patent: 5574605 (1996-11-01), Baumgart et al.
patent: 5583725 (1996-12-01), Coffey et al.
patent: 5648885 (1997-07-01), Nishioka et al.
Ishi, et al "Stress Induced Anisotropy . . . " IEEE Transactions in Magnetics. vol. 32, No. 5, Sep. 1996.
T. Ishi et al., "Stress Induced Anistropy Effect for SAL Films in Magnetoresistive Elements", IEEE Trans. on Mags., vol. 32, No. 5, Sep. 1996.

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