Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head
Reexamination Certificate
2007-02-06
2007-02-06
Heinz, A. J. (Department: 2627)
Dynamic magnetic information storage or retrieval
Head
Magnetoresistive reproducing head
Reexamination Certificate
active
10675481
ABSTRACT:
In one illustrative example of the invention, a spin valve sensor of a magnetic head has a sensor stack structure which includes a free layer structure and an antiparallel (AP) pinned layer structure separated by a spacer layer. A capping layer structure formed over the sensor stack structure includes a layer of cobalt (e.g. pure cobalt, oxidized cobalt, or cobalt-iron) as well as a layer of tantalum formed over it. Advantageously, the cobalt layer in the capping layer structure enhances the GMR and soft magnetic properties for thinner freelayer structures while maintaining a desirable slightly negative magnetostriction.
REFERENCES:
patent: 5432734 (1995-07-01), Kawano et al.
patent: 5701223 (1997-12-01), Fontana, Jr. et al.
patent: 5880913 (1999-03-01), Gill
patent: 6134090 (2000-10-01), Mao et al.
patent: 6154349 (2000-11-01), Kanai et al.
patent: 6208491 (2001-03-01), Pinarbasi
patent: 6282068 (2001-08-01), Pinarbasi
patent: 6348274 (2002-02-01), Kamiguchi et al.
patent: 6353519 (2002-03-01), Pinarbasi
patent: 6495275 (2002-12-01), Kamiguchi et al.
patent: 6535362 (2003-03-01), Kawawake et al.
patent: 6897532 (2005-05-01), Schwarz et al.
patent: 2001/0040781 (2001-11-01), Tanaka et al.
patent: 2002/0085322 (2002-07-01), Pinarbasi
patent: 2002/0181173 (2002-12-01), Nagai
patent: 2003/0035255 (2003-02-01), Hasegawa et al.
patent: WO 02/077657 (2002-10-01), None
Egelhoff Jr. et al., Oxygen as a Surfactant in the Gowth of Gant Magnetoresistance Spin Valves, Journal of Applied Physics, Dec. 15, 1997, 6142-6151, 82-12.
Sakakima et al., Enhanced GMR in PtMn-Based Spin Valves with Specular Reflective Thin Oxide Layers, IEEE Transactions on Magnetics, Sep. 2000, 2554-2556, 36-5, Kyoto, Japan.
Wang et al., Specularity in GMR Spin Valves and In Situ Electrical and Magnetotransport Measurements, IEEE Transactions on Magnetics, Sep. 2000, 2841-2846, 36-5, Kyoto, Japan.
Freitag James Mac
Pinarbasi Mustafa Michael
Heinz A. J.
Hitachi Global Storage Technologies - Netherlands B.V.
Kises Matthew
Oskorep, Esq. John J.
LandOfFree
Spin valve with a capping layer comprising an oxidized... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Spin valve with a capping layer comprising an oxidized..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Spin valve with a capping layer comprising an oxidized... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3890819