Spin valve transistor with stabilization and method for...

Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head

Reexamination Certificate

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C428S692100, C438S003000

Reexamination Certificate

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07016167

ABSTRACT:
A method and structure for a spin valve transistor (SVT) comprises a magnetic field sensor, an insulating layer adjacent the magnetic field sensor, a bias layer adjacent the insulating layer, a non-magnetic layer adjacent the bias layer, and a ferromagnetic layer over the non-magnetic layer, wherein the insulating layer and the non-magnetic layer comprise antiferromagnetic materials. The magnetic field sensor comprises a base region, a collector region adjacent the base region, an emitter region adjacent the base region, and a barrier region located between the base region and the emitter region. The bias layer is between the insulating layer and the non-magnetic layer. The bias layer is magnetic and is at least three times the thickness of the magnetic materials in the base region.

REFERENCES:
patent: 5729410 (1998-03-01), Fontana et al.
patent: 5962905 (1999-10-01), Kamiguchi et al.
patent: 5973334 (1999-10-01), Mizushima et al.
patent: 6266218 (2001-07-01), Carey et al.
patent: 6480365 (2002-11-01), Gill et al.
patent: 2003/0214763 (2003-11-01), Childress et al.
patent: 2002-26422 (2004-01-01), None

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