Spin valve transistor with self-pinned antiparallel pinned...

Details Spin valve transistor with self-pinned antiparallel pinned... Spin valve transistor with self-pinned antiparallel pinned...

2006-08-01

2006-08-01

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257S427000

Reexamination Certificate

active

07084467

ABSTRACT:
A spin valve transistor includes an emitter, a collector, a base between the emitter and the collector, a spin valve which includes a free layer structure, a self-pinned antiparallel (AP) pinned layer structure and a nonmagnetic spacer layer between the free layer structure and the AP pinned layer structure wherein the base includes at least the free layer structure.

REFERENCES:
patent: 6295187 (2001-09-01), Pinarbasi
patent: 6400536 (2002-06-01), Gill
patent: 6480365 (2002-11-01), Gill et al.
patent: 6501143 (2002-12-01), Sato et al.
patent: 6655006 (2003-12-01), Pinarbasi
patent: 2002/0024780 (2002-02-01), Mao et al.
patent: 2002/0181169 (2002-12-01), Pinarbasi
patent: 2003/0214004 (2003-11-01), Sato et al.
patent: 2004/0061984 (2004-04-01), Ito et al.
patent: 2004/0257192 (2004-12-01), Mori et al.
patent: 2000-322717 (2000-11-01), None
patent: 2003-289163 (2003-10-01), None

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