Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2005-03-01
2005-03-01
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C257S421000, C257S422000, C257S424000, C257S425000, C257S427000
Reexamination Certificate
active
06861718
ABSTRACT:
A spin valve transistor, magnetic reproducing head including a spin valve transistor and a magnetic information storage system having the spin valve transistor. The spin valve transistor has a collector, a base formed on the collector, a tunnel barrier layer formed on the base and an emitter formed on the tunnel barrier layer. In one embodiment, the collector may have a first semiconductor layer of first composition and a second semiconductor layer of a different composition epitaxially grown. The base of the first spin valve transistor may be formed on the second semiconductor layer and have a magnetization pinned layer having a magnetization substantially fixed in an applied magnetic field, a nonmagnetic layer and a magnetization free layer having a magnetization free to rotate under the applied magnetic field. The emitter of a spin valve transistor of a second embodiment may include a semiconductor layer containing an oxide of transitional metal and contacting the tunnel barrier layer.
REFERENCES:
patent: 6501143 (2002-12-01), Sato et al.
U.S. patent appl. Ser. No. 10/400,569, Sato et al., filed Mar. 28, 2003.
U.S. patent appl. Ser. No. 10/669,007, Sato et al., filed Sep. 24, 2003.
R. Sato and K. Mizushima,Spin-Valve transistor with an Fe/Au/Fe(001) baseApplied Physics Letters, vol. 79, No. 8, pp. 1157-1159, Aug. 20, 2001.
D.J. Monsma, J.C. Lodder, Th.J.A. Popma, and B. Dieny,Perpendicular Hot Electron Spin-Valve Effect in a New Megnetic Field Sensor: The Spin-Valve Transistor, Physical Review Letters, vol. 74, No. 26, pp. 5260-5263, Jun. 26, 1995.
U.S. Appl. No. 10/320,648, filed Dec. 17, 2002, Sato et al.
U.S. Appl. No. 10/400,569, filed Mar. 28, 2003, Sato et al.
Mizushima Koichi
Sato Rie
Kabushiki Kaisha Toshiba
Pham Long
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