Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head
Reexamination Certificate
2006-12-05
2006-12-05
Heinz, A. J. (Department: 2627)
Dynamic magnetic information storage or retrieval
Head
Magnetoresistive reproducing head
Reexamination Certificate
active
07145755
ABSTRACT:
In one illustrative example of the invention, a spin valve sensor includes a free layer structure; an antiparallel (AP) pinned layer structure; and a non-magnetic electrically conductive spacer layer in between the free layer structure and the AP pinned layer structure. The AP pinned layer structure includes a first AP pinned layer; a second AP pinned layer; and an antiparallel coupling (APC) layer formed between the first and the second AP pinned layer. One of the first and the second AP pinned layers consists of cobalt and the other one includes cobalt-iron. The pure cobalt may be provided in the first AP pinned layer or the second AP pinned layer. Advantageously, the use of cobalt in one of the AP pinned layers increases the Δr/R of the spin valve sensor.
REFERENCES:
patent: 5432734 (1995-07-01), Kawano et al.
patent: 5701223 (1997-12-01), Fontana et al.
patent: 5880913 (1999-03-01), Gill
patent: 6134090 (2000-10-01), Mao et al.
patent: 6226159 (2001-05-01), Pinarbasi
patent: 6282068 (2001-08-01), Pinarbasi
patent: 6338899 (2002-01-01), Fukuzawa et al.
patent: 6348274 (2002-02-01), Kamiguchi et al.
patent: 6353519 (2002-03-01), Pinarbasi
patent: 6356419 (2002-03-01), Gill
patent: 6495275 (2002-12-01), Kamiguchi et al.
patent: 6535362 (2003-03-01), Kawawake et al.
patent: 6905780 (2005-06-01), Yuasa et al.
patent: 2001/0040781 (2001-11-01), Tanaka et al.
patent: 2002/0085322 (2002-07-01), Pinarbasi
patent: 2002/0181173 (2002-12-01), Nagai
patent: 2003/0035255 (2003-02-01), Hasegawa et al.
patent: WO 02/077657 (2002-10-01), None
Egelhoff Jr. et al., Oxygen as a Surfactant in the Growth of Gant Magnetoresistance Spin Valves, Journal of Applied Physics, Dec. 15, 1997, 6142-6151, 82-12.
Sakakima et al., Enhanced GMR in PtMn-Based Spin Valves with Specular Reflective Thin Oxide Layers, IEEE Transactions on Magnetics, Sep. 2000, 2554-2556, 36-5, Kyoto, Japan.
Wang et al., Specularity in GMR Spin Valves and In Situ Electrical and Mangetotransport Measurements, IEEE Transactions on Magnetics, Sep. 2000, 2841-2846, 36-5, Kyoto, Japan.
Freitag James Mac
Pinarbasi Mustafa Michael
Heinz A. J.
Oskorep, Esq. John J.
Zises Matthew
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